Complex Bipolar Transistors[ MOSFET + BIP TR ] / [ BIP TR + MOSFET ]
Configuration | Package | EMT6 | UMT6 | TSMT8 | VCEO(V) | IC(A) | hFE*2 | RoHS |
Application |
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BIP_PNP+MOS_Nch | Power Manegement | EMF6 | UMF6N | - | -12 | -0.5 | 270~680 | Yes |
BIP_NPN+MOS_Nch | Power Manegement | EMF9 | UMF9N | - | 12 | 0.5 | 270~680 | Yes |
BIP_PNP+MOS_Pch | Load switch | - | - | QS8F2 | -30 | -2 | 270~680 | Yes |
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.
Complex Bipolar Transistors[ BIP TR + DTR ] / [ DTR + BIP TR ]
Configuration | Package | EMT6 | UMT6 | VCEO(V) | IC(A) | hFE*2 | RoHS |
Application |
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BIP_PNP+DTR_NPN | Power Manegement | - | UMF28N | -50 | -0.15 | 180~390 | Yes |
EMF5 | UMF5N | -12 | -0.5 | 270~680 | Yes | ||
BIP_NPN+DTR_NPN | Power Manegement | EMF8 | UMF8N | 12 | 0.5 | 270~680 | Yes |
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
Complex Bipolar Transistors[ BIP TR + Diode ] / [ Diode + BIP TR ]
Configuration | Package | EMT6 | UMT5 | UMT6 | SMT5 | TUMT5 | TSMT5 | VCEO(V) | IC(A) | hFE*2 | RoHS |
Application |
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BIP_PNP+Di | DC-DC Converter | - | UML1N | - | - | - | -50 | -0.15 | 120~560 | Yes | |
- | UML4N | - | - | - | -12 | -0.5 | 270~680 | Yes | |||
- | - | FML9 | - | - | -12 | -1.5 | 270~680 | Yes | |||
- | - | - | - | QSL11 | -30 | -1 | 270~680 | Yes | |||
- | - | - | US5L9 | QSL9 | -12 | -1.5 | 270~680 | Yes | |||
BIP_NPN+Di | DC-DC Converter | - | UML2N | - | - | - | 50 | 0.15 | 120~560 | Yes | |
- | UML6N | - | - | - | 12 | 0.5 | 270~680 | Yes | |||
- | - | FML10 | - | - | 12 | 1.5 | 270~680 | Yes | |||
- | - | - | US5L12 | QSL12 | 30 | 1 | 270~680 | Yes | |||
- | - | - | US5L10 | QSL10 | 12 | 1.5 | 270~680 | Yes | |||
Shunt Regulator | EML22 | UML23N | - | - | - | 50 | 0.15 | 120~270 | Yes |
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
Complex Bipolar Transistors[ MOSFET + DTR ] / [ DTR + MOSFET ]
Configuration | Package | EMT6 (SC-107C) | UMT6 (SC-88) <SOT-363> | VCEO(V) | IC(A) | hFE*2 | RoHS |
Application |
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DTR_PNP+MOS_Nch | Power Manegement | EMF32 | UMF32N | -50 | -0.1 | 100~600 | Yes |
EMF33 | - | -12 | -0.5 | 140~ | Yes |
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.
Complex Bipolar Transistors[ DTR + Diode ] / [ Diode + DTR ]
Configuration | Package | EMT5 (SC-107BB) | EMT6 (SC-107C) | VCEO(V) | IC(A) | hFE*2 | RoHS |
Application |
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DTR_PNP+Di | DC-DC Converter | EML17 | -50 | 0.1 | 68~ | Yes | |
DTR_NPN+Di | DC-DC Converter | EML20 | 50 | 0.1 | 80~ | Yes |
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
Complex Digital Transistors[ DTR + DTR ] / [ DTR + DTR ]
Configuration | Package | EMT5 | EMT6 | UMT5 | UMT6 | SMT5 | SMT6 | TUMT6 | TSMT6 | Eqivalent | VCC(VCEO)(V) | IO(IC)(A) | GI | RoHS |
Application |
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| Upper row: Tr1 lower: Tr2 | ||||||||
PNP+PNP | Potentionaldivider type | - | UMA9N | - | - | - | DTA114E×2 | -50 | -0.1 | 30~ | Yes | |||
- | UMA1N | - | - | - | DTA124E×2 | -50 | -0.1 | 56~ | Yes | |||||
EMA2 | UMA2N | - | - | - | DTA144E×2 | -50 | -0.1 | 68~ | Yes | |||||
Leak asorption type | EMA5 | UMA5N | - | - | - | DTA123J×2 | -50 | -0.1 | 80~ | Yes | ||||
Potentional divider type | - | - | FMA9A | - | - | DTA114E×2 | -50 | -0.1 | 30~ | Yes | ||||
- | - | FMA1A | - | - | DTA124E×2 | -50 | -0.1 | 56~ | Yes | |||||
- | - | FMA2A | - | - | DTA144E×2 | -50 | -0.1 | 68~ | Yes | |||||
Leak asorption type | - | - | FMA5A | - | - | DTA123J×2 | -50 | -0.1 | 80~ | Yes | ||||
Input resistor type | EMA4 | UMA4N | - | - | - | DTA114T×2 | -50 | -0.1 | 100~600 | Yes | ||||
EMA3 | UMA3N | - | - | - | DTA143T×2 | -50 | -0.1 | 100~ 600 | Yes | |||||
Input resistor type | - | - | FMA4A | - | - | DTA114T×2 | -50 | -0.1 | 100~ 600 | Yes | ||||
- | - | FMA3A | - | - | DTA143T×2 | -50 | -0.1 | 100~ 600 | Yes | |||||
Potentional divider type | EMB11 | UMB11N | IMB11A | - | - | DTA114E×2 | -50 | -0.1 | 30~ | Yes | ||||
EMB2 | UMB2N | IMB2A | - | - | DTA144E×2 | -50 | -0.1 | 68~ | Yes | |||||
Leak asorption type | EMB10 | UMB10N | IMB10A | - | - | DTA123J×2 | -50 | -0.1 | 80~ | Yes | ||||
Potentional divider type | EMB6 | UMB6N | - | - | - | DTA144E×2 | -50 | -0.1 | 68~ | Yes | ||||
Input resistor type | EMB4 | - | - | - | - | DTA114T×2 | -50 | -0.1 | 100~ 600 | Yes | ||||
EMB3 | UMB3N | IMB3A | - | - | DTA143T×2 | -50 | -0.1 | 100~ 600 | Yes | |||||
NPN+NPN | Potentional divider type | EMG9 | UMG9N | - | - | - | DTC114E×2 | 50 | 0.1 | 30~ | Yes | |||
EMG5 | UMG5N | - | - | - | DTC114Y×2 | 50 | 0.1 | 68~ | Yes | |||||
EMG11 | UMG11N | - | - | - | DTC123J×2 | 50 | 0.1 | 80~ | Yes | |||||
EMG1 | UMG1N | - | - | - | DTC124E×2 | 50 | 0.1 | 56~ | Yes | |||||
EMG8 | UMG8N | - | - | - | DTC143Z×2 | 50 | 0.1 | 80~ | Yes | |||||
EMG2 | UMG2N | - | - | - | DTC144E×2 | 50 | 0.1 | 68~ | Yes | |||||
Potentional divider type | - | - | FMG9A | - | - | DTC114E×2 | 50 | 0.1 | 30~ | Yes | ||||
- | - | FMG1A | - | - | DTC124E×2 | 50 | 0.1 | 56~ | Yes | |||||
- | - | FMG2A | - | - | DTC144E×2 | 50 | 0.1 | 68~ | Yes | |||||
Input resistor type | EMG4 | UMG4N | - | - | - | DTC114T×2 | 50 | 0.1 | 100~ 600 | Yes | ||||
EMG3 | UMG3N | - | - | - | DTC143T×2 | 50 | 0.1 | 100~ 600 | Yes | |||||
EMG6 | UMG6N | - | - | - | DTC144T×2 | 50 | 0.1 | 100~600 | Yes | |||||
Input resistor type | - | - | FMG4A | - | - | DTC114T×2 | 50 | 0.1 | 100~ 600 | Yes | ||||
- | - | FMG3A | - | - | DTC143T×2 | 50 | 0.1 | 100~ 600 | Yes | |||||
- | - | FMG6A | - | - | DTC144T×2 | 50 | 0.1 | 100~ 600 | Yes | |||||
Potentional divider type | EMH11 | UMH11N | IMH11A | - | - | DTC114E×2 | 50 | 0.1 | 30~ | Yes | ||||
EMH1 | UMH1N | IMH1A | - | - | DTC124E×2 | 50 | 0.1 | 56~ | Yes | |||||
EMH25 | - | - | - | - | DTC143Z×2 | 50 | 0.1 | 80~ | Yes | |||||
EMH2 | UMH2N | IMH2A | - | - | DTC144E×2 | 50 | 0.1 | 68~ | Yes | |||||
Leak asorption type | EMH9 | UMH9N | IMH9A | - | - | DTC114Y×2 | 50 | 0.1 | 68~ | Yes | ||||
EMH10 | UMH10N | - | - | - | DTC123J×2 | 50 | 0.1 | 80~ | Yes | |||||
Potentional divider type | - | UMH5N | - | - | - | DTC124E×2 | 50 | 0.1 | 56~ | Yes | ||||
EMH6 | UMH6N | - | - | - | DTC144E×2 | 50 | 0.1 | 68~ | Yes | |||||
Potentional divider type | - | - | IMH5A | - | - | DTC124E×2 | 50 | 0.1 | 56~ | Yes | ||||
- | - | IMH6A | - | - | DTC144E×2 | 50 | 0.1 | 68~ | Yes | |||||
Input resistor type | EMH4 | UMH4N | IMH4A | - | - | DTC114T×2 | 50 | 0.1 | 100~ 600 | Yes | ||||
EMH3 | UMH3N | IMH3A | - | - | DTC143T×2 | 50 | 0.1 | 100~ 600 | Yes | |||||
EMH15 | - | IMH15A | - | - | DTC144T×2 | 50 | 0.1 | 100~ 600 | Yes | |||||
- | - | IMH21 | - | - | DTC614T×2 | 20 | 0.6 | 820~2700 - | Yes | |||||
- | - | IMH23 | US6H23 | - | DTC643T×2 | 20 | 0.6 | 820~2700 | Yes | |||||
Input resistor type | - | UMH8N | - | - | - | DTC114T×2 | 50 | 0.1 | 100~ 600 | Yes | ||||
- | UMH14N | - | - | - | DTC144T×2 | 50 | 0.1 | 100~ 600 | Yes | |||||
Input resistor type | - | - | IMH8A | - | - | DTC114T×2 | 50 | 0.1 | 100~ 600 | Yes | ||||
- | - | IMH14A | - | - | DTC144T×2 | 50 | 0.1 | 100~ 600 | Yes | |||||
Input resistor type | - | - | - | - | QSH29 | DTDG14GP×2 | 60±10 | 0.5 | 500~ | Yes | ||||
PNP+NPN | Potentional divider type | EMD3 | UMD3N | - | - | - | DTA114E×DTC114E | 50 | 0.1 | 30~ | Yes | |||
EMD2 | UMD2N | - | - | - | DTA124E×DTC124E | 50 | 0.1 | 56~ | Yes | |||||
EMD12 | UMD12N | - | - | - | DTA144E×DTC144E | 50 | 0.1 | 68~ | Yes | |||||
Leak asorption type | EMD38 | - | - | - | - | DTA113Z×DTC114Y | 50 | 0.1 | 68~ | Yes | ||||
EMD9 | UMD9N | - | - | - | DTA114Y×DTC114Y | 50 | 0.1 | 68~ | Yes | |||||
EMD4 | UMD4N | - | - | - | DTA114Y×DTC144E | 50 | 0.1 | 68~ | Yes | |||||
EMD5 | UMD5N | - | - | - | DTA143X×DTC144E | 50 | 0.1 | 68~ | Yes | |||||
EMD22 | UMD22N | - | - | - | DTA143Z×DTC143Z | 50 | 0.1 | 80~ | Yes | |||||
Potentional divider type | - | - | IMD3A | - | - | DTA114E×DTC114E | 50 | 0.1 | 30~ | Yes | ||||
- | - | IMD2A | - | - | DTA124E×DTC124E | 50 | 0.1 | 56~ | Yes | |||||
Leak asorption type | - | - | IMD90A | - | - | DTA114Y×DTC114Y | 50 | 0.1 | 68~ | Yes | ||||
Input resistor type | EMD6 | UMD6N | - | - | - | DTA143T×DTC143T | 50 | 0.1 | 100~ 600 | Yes | ||||
Input resistor type | - | - | IMD6A | - | - | DTA143T×DTC143T | 50 | 0.1 | 100~ 600 | Yes | ||||
Power management | EMD29 | - | - | - | - | DTB513Z×DTC114E | -12 | -0.5 | 140~ | Yes | ||||
EMD30 | - | - | - | - | DTB713Z×DTC114E | -30 | 0.2 | 140~ | Yes | |||||
Power management | - | - | IMD10A | - | - | - ×DTC114T | -50 | -0.5 | 68~ | Yes | ||||
- | - | IMD16A | - | - | - ×DTC115T | -50 | -0.5 | 82~ | Yes |
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
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