Complex Transistors_1
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Complex Transistors_1
Complex Transistors

Complex Transistors

Rohm's production volume of Transistor is world's top class and  transistor products had been getting refined by quickly complying with the  market needs. This group of transistors are hybrid transistor with other device  as combination listed below in ultra-small package type, small power type and  so on, for the benefit of space saving and components reduction.

Complex  MOSFETs[ MOSFET + MOSFET ]
       
     Small Signal MOSFET

VMT6EMT6
(SC-107C)		UMT6
(SC-88)
<SOT-363>

[unit:mm]

Drive
           Voltage
           (V)

ID
         (A)

VDSS(V)

RoHS

20

Package

30

Package

50

Package

60

Package

0.9

0.2

-

-

-

-

EM6K34(N+N)
UM6K34N(N+N)

EMT6
         UMT6

-

-

Yes

1.2

0.1

VT6J1(P+P)
VT6K1(N+N)
VT6M1(N+P)

VMT6
           VMT6
         VMT6

-

-

-

-

-

-

Yes

0.2

EM6J1(P+P)
EM6K7(N+N)
EM6M2(N+P)

EMT6    EMT6
EMT6

-

-

EM6K33(N+N)
UM6K33N(N+N)

EMT6
         UMT6

-

-

Yes

1.8

0.3

EM6K6(N+N)

EMT6

-

-

-

-

-

-

Yes

2.5

0.25

-

-

-

-

-

-

EM6K31(N+N)
UM6K31N(N+N)

EMT6
UMT6

Yes

4

0.2

-

-

UM6J1N(P+P)

UMT6

-

-

-

-

Yes

(N) means Nch,  and (P) means Pch.
 "MOSFET" might cause chip aging and breakdown  under the large electrified environment. Please consider to design with ESD  protection circuit.

Middle Power MOSFET

TUMT6

TSMT5

TSMT6
         (SC-95)

TSMT8

TSST8

[unit:mm]

Drive
         Voltage
         (V)

ID
         (A)

VDSS(V)

RoHS

0

Package

12

Package

20

Package

30

Package

45

Package

100

Package

1.5

1.3

-

-

US6J11(P+P)

TUMT6

-

-

-

-

-

-

-

-

Yes

1.5

-

-

-

-

US6M11(N+P)

TUMT6

-

-

-

-

-

-

Yes

2

-

-

QS6J11(P+P)

QS8J13(P+P)

US6J12(P+P)

TSMT6
         TSMT8
         TUMT6

-

-

-

-

-

-

-

-

Yes

2.5

-

-

TT8J13(P+P)

TSST8

TT8J21(P+P)
TT8K1(N+N)
TT8M1(N+P)
TT8M3(N+P)

TSST8
         TSST8
         TSST8
         TSST8

-

-

-

-

-

-

Yes

3.5

-

-

QS8J11(P+P)
TT8J11(P+P)

TSMT8
         TSST8

-

-

-

-

-

-

-

-

Yes

4

-

-

QS8J2(P+P)

TSMT8

-

-

-

-

-

-

-

-

Yes

4.5

-

-

QS8J12(P+P)

TSMT8

-

-

-

-

-

-

-

-

Yes

1.8

1.5

-

-

-

-

US6K4(N+N)

TUMT6

-

-

-

-

-

-

Yes

2.5

1

-

-

-

-

-

-

QS6K1(N+N)

TSMT6

QS6K21(N+N)

TSMT6

-

-

Yes

1.5

-

-

-

-

-

-

QS6M3(N+P)

QS6M4(N+P)

US6K1(N+N)

US6M2(N+P)

TSMT6
 TSMT6
TUMT6
 TUMT6

-

-

-

-

Yes

2

-

-

-

-

-

-

QS5K2(N+N)

TSMT5

-

-

-

-

Yes

2.5

-

-

-

-

-

-

TT8K2(N+N)

TSST8

-

-

-

-

Yes

3.5

-

-

-

-

-

-

QS8K2(N+N)

TSMT8

-

-

-

-

Yes

2.5/1.5

2.5

-

-

-

-

-

-

TT8M2(N+P)

TSST8

-

-

-

-

Yes

4

1.4

-

-

-

-

-

-

US6K2(N+N)

US6M1(N+P)

TUMT6
         TUMT6

-

-

-

-

Yes

2

-

-

-

-

-

-

-

-

-

-

QS8K51(N+N)
QS8M51(N+P)

TSMT8
TSMT8

Yes

2.5

-

-

-

-

-

-

TT8J2(P+P)
TT8J3(P+P)

TSST8
TSST8

-

-

-

-

Yes

3

QS8M31(N+P)

TSMT8

-

-

-

-

TT8K11(N+N)
TT8M11(N+P)

TSST8
TSST8

-

-

-

-

Yes

3.5

-

-

-

-

-

-

QS8K11(N+N)
QS8M11A(N+P)

TSMT8
TSMT8

-

-

-

-

Yes

4

-

-

-

-

-

-

QS8J4(P+P)
QS8K12(N+N)
QS8M12(N+P)

TSMT8
TSMT8
TSMT8

QS8K21(N+N)

TSMT8

-

-

Yes

5

-

-

-

-

-

-

QS8J5(P+P)

TSMT8

-

-

-

-

Yes

6

-

-

-

-

-

-

QS8K13(N+N)
QS8M13(N+P)

TSMT8
TSMT8

-

-

-

-

Yes

(N) means Nch,  and (P) means Pch.
 "MOSFET" might cause chip aging and breakdown  under the large electrified environment. Please consider to design with ESD  protection circuit.


   

Power MOSFET

SOP8

Drive
         Voltage
         (V)

ID
         (A)

VDSS(V)

RoHS

30

Package

40

Package

45

Package

60

Package

80

Package

100

Package

250

Package

500

Package

4

3

-

-

-

-

-

-

-

-

-

-

SP8M51(N+P)

SOP8

-

-

-

-

Yes

3.4

-

-

-

-

-

-

-

-

SH8M41(N+P)

SOP8

-

-

-

-

-

-

Yes

3.5

SH8K11(N+N)
SH8M11(N+P)

SOP8
SOP8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Yes

4

-

-

SH8K25(N+N)

SOP8

-

-

-

-

-

-

-

-

-

-

-

-

Yes

4.5

SH8J62(P+P)

SOP8

-

-

SH8K22(N+N)
SH8M24(N+P)

SOP8
SOP8

SH8J31(P+P)
H8K32(N+N)

SOP8
SOP8

-

-

-

-

-

-

-

-

Yes

5.0

SH8K12(N+N)
SH8M12(N+P)

SOP8
SOP8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Yes

6.0

SH8K13(N+N)
SH8M13(N+P)

SOP8
SOP8

SH8K26(N+N)

SOP8

-

-

-

-

-

-

-

-

-

-

-

-

Yes

7

SH8J65(P+P)
SH8K14(N+N)

SOP8
SOP8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Yes

9

SH8J66(P+P)
SH8K15(N+N)
   SH8M14(N+P)

SOP8
SOP8
SOP8

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Yes

10

0.5

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SP8K80(N+N)

SOP8

Yes

3

-

-

-

-

-

-

-

-

-

-

-

-

SH8M70(N+P)

SOP8

-

-

Yes

(N) means Nch,  and (P) means Pch.
 "MOSFET" might cause chip aging and breakdown  under the large electrified environment. Please consider to design with ESD  protection circuit.


   

Complex  MOSFETs[ MOSFET + Diode ] / [ Diode + MOSFET ]

TUMT5

TSMT5

WEMT6

TSST8

[unit:mm]

Drive
         Voltage
         (V)

ID
         (A)

VDSS(V)

RoHS

12

Package

20

Package

30

Package

45

Package

1.5

1.5

-

-

ES6U2(N+SBD)

WEMT6

-

-

-

-

Yes

2.4

-

-

TT8U1(P+SBD)
TT8U2(P+SBD)

TSST8
TSST8

-

-

-

-

Yes

2.5

-

-

QS5U36(N+SBD)

TSMT5

-

-

-

-

Yes

1.8

1.3

ES6U1(P+SBD)

WEMT6

-

-

-

-

-

-

Yes

1.5

-

-

QS5U34(N+SBD)

TSMT5

-

-

-

-

Yes

 

 

2.5

1

-

-

ES6U42(P+SBD)
US5U30(P+SBD)
US5U38(P+SBD)

WEMT6
TUMT5
TUMT5

-

-

-

-

Yes

1.5

-

-

QS5U21(P+SBD)
QS5U23(P+SBD)
QS5U26(P+SBD)
QS5U27(P+SBD)
QS6U22(P+SBD)

TSMT5
 TSMT5
TSMT5
TSMT5
TSMT6

ES6U41(N+SBD)
US5U1(N+SBD)
US5U3(N+SBD)
US6U37(N+SBD)

WEMT6
TUMT5
TUMT5
TUMT6

-

-

Yes

2

-

-

QS5U28(P+SBD)

TSMT5

QS5U12(N+SBD)
QS5U13(N+SBD)
QS5U16(N+SBD)
QS5U17(N+SBD)

TSMT5
TSMT5
TSMT5
TSMT5

-

-

Yes


         
4

0.7

-

-

-

-

-

-

US5U35(P+SBD)

TUMT5

Yes

1

-

-

-

-

QS6U24(P+SBD)

TSMT6

-

-

Yes

1.4

-

-

-

-

ES6U3(N+SBD)
         US5U2(N+SBD)

WEMT6
         TUMT5

-

-

Yes

2

-

-

-

-

QS5U33(P+SBD)

TSMT5

-

-

Yes

(N) means Nch,  and (P) means Pch.
   "MOSFET" might cause chip aging and breakdown under  the large electrified environment. Please consider to design with ESD  protection circuit.


Complex  Bipolar Transistors[ BIP TR + BIP TR ]


         Configuration

Package

VMT6

EMT5
(SC-107BB)

EMT6
(SC-107C)

UMT5
(SC-88A)
<SOT-353>

UMT6
(SC-88)
<SOT-363>

SMT5
(SC-74A)

SMT6
(SC-74)
<SOT-457>

TUMT6

TSMT5

TSMT6
(SC-95)

VCEO(V)

IC(A)

hFE*2

RoHS

Application

PNP+PNP

Pre Amp.

VT6T2

-

-

-

-

-

-50

-0.1

120～560

Yes

-

EMT1

UMT1N

IMT1A

-

-

-50

-0.15

120～560

Yes

VT6T1

-

-

-

-

-

-20

-0.2

120～560

Yes

-

EMT18

UMT18N

IMT18

-

-

-12

-0.5

270～680

Yes

-

-

-

IMT17

-

-

-50

-0.5

120～390

Yes

-

-

-

IMT2A

-

-

-50

-0.15

120～560

Yes

-

EMT2

UMT2N

-

-

-

-50

-0.15

120～560

Yes

-

-

-

IMT4

-

-

-120

-0.05

180～820

Yes

-

-

-

IMT3A

-

-

-50

-0.15

120～560

Yes

-

EMT3

-

-

-

-

-50

-0.15

120～560

Yes

Driver

-

-

-

-

US6T9

QST9

-30

-1

270～680

Yes

-

-

-

-

US6T8

QST8

-12

-1.5

270～680

Yes

Suitable for    current mirror circuit

VT6T12

-

-

-

-

-

-50

-0.1

120～560

Yes

VT6T11

-

-

-

-

-

-20

-0.2

120～560

Yes

NPN+NPN

Pre Amp.

VT6X2

-

-

-

-

-

50

0.1

120～560

Yes

-

EMX1

UMX1N

IMX1

-

-

50

0.15

120～560

Yes

-

EMX26

-

-

-

-

50

0.15

820～2700

Yes

VT6X1

-

-

-

-

-

20

0.2

120～560

Yes

-

-

-

IMX25

-

-

20

0.3

820～2700

Yes

-

EMX18

UMX18N

-

-

-

12

0.5

270～680

Yes

-

-

-

IMX9

-

-

20

0.5

560～2700

Yes

-

-

-

IMX17

-

-

50

0.5

120～390

Yes

-

-

-

IMX2

-

-

50

0.15

120～560

Yes

-

EMX2

UMX2N

-

-

-

50

0.15

120～560

Yes

-

-

-

IMX8

-

-

120

0.05

180～820

Yes

-

-

-

IMX3

-

-

50

0.15

120～560

Yes

-

EMX3

UMX3N

-

-

-

50

0.15

120～560

Yes

-

-

-

-

-

QS6Z5

50
         -50

1
         -1

180～450

Yes

High    Frequency

-

-

-

IMX5

-

-

11

0.05

56～120

Yes

-

-

-

IMX4

-

-

20

0.05

56～180

Yes

-

-

UMX21N

-

-

-

6

0.05

180～560

Yes

-

EMX5

UMX5N

-

-

-

11

0.05

56～120

Yes

-

EMX4

UMX4N

-

-

-

20

0.05

56～180

Yes

Driver

-

-

-

-

US6X8

QSX8

30

1

270～680

Yes

-

-

-

-

US6X7

QSX7

12

1.5

270～680

Yes

Suitable for    current mirror circuit

VT6X12

-

-

-

-

-

50

0.1

120～560

Yes

VT6X11

-

-

-

-

-

20

0.2

120～560

Yes

DC-DC    Converter

-

-

-

-

-

QS5W2

50

3

180～450

Yes

-

-

-

-

-

QS5W1

30

3

200～500

Yes

NPN+PNP

Amplifier

-

-

-

FMY1A

-

-

-50
50

-0.15
0.15

120～560

Yes

-

EMY1

UMY1N

-

-

-

-50
50

-0.15
0.15

120～560

Yes

Inverter    Driver

-

-

-

FMY4A

-

-

-50
50

-0.15
0.15

120～560

Yes

Pre Amp.

VT6Z2

-

-

-

-

-

-50
50

-0.1
0.1

120～560

Yes

VT6Z1

-

-

-

-

-

-20
20

-0.2
0.2

120～560

Yes

-

-

-

IMZ1A

-

-

50
-50

0.15
-0.15

120～560

Yes

-

-

-

IMZ4

-

-

32
-32

0.5
-0.5

180～390

Yes

-

EMZ1

UMZ1N

-

-

-

50
-50

0.15
-0.15

120～560

Yes

-

EMZ7

-

-

-

-

12
-12

0.5
-0.5

270～680

Yes

-

EMZ8

-

-

-

-

-12
50

-0.5
0.15

270～680

Yes

-

-

-

IMZ2A

-

-

-50
50

-0.15
0.15

120～560

Yes

-

EMZ2

UMZ2N

-

-

-

-50
50

-0.15
0.15

120～560

Yes

DC-DC    Converter

-

-

-

-

-

QSZ2

-30
30

-1.5
1.5

270～680

Yes

-

-

-

-

-

QSZ1

-12
12

-2
2

270～680

Yes

-

-

-

-

-

QSZ4

-30
30

-2
2

270～680

Yes

-

-

-

-

-

QSZ3

-12
12

-3
3

270～680

Yes

-

-

-

-

-

QS5Y1

-30
 30

-3
3

200～500

Yes

-

-

-

-

-

QS5Y2

-50
50

-3
3

180～450

Yes

* No.1 Pin is  located on the lower left of equivalent circuite diagram for  VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
   * No.1 Pin is located on the lower right of equivalent  circuite diagram for SMT5 and SMT6 packages.

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